BTO-silicon photonic integrated circuits for optical communications
April 17 @ 2:00 pm - 3:00 pm
Abstract:
The demand for continuous increase in the bandwidth of optical transceivers creates a need for technological innovation of photonic integrated circuits (PICs). In particular, the modulators are often the limiting electro-optic component. Silicon photonics has provided a scalable platform for small, cost-effective, and highly integrated PICs, but silicon-based modulators have limited bandwidth and relatively large <a href="http://insertion-loss.
Barium” target=”_blank” title=”insertion-loss.
Barium”>insertion-loss.
Barium titanate (BTO) has emerged as a material for high-speed, low-loss electro-optic modulators that can be integrated into silicon photonic platforms. It is a stable oxide material, with large Pockels coefficients that can be produced on 300 mm wafers, which enables high-performance transmitter PICs with the same level of integration as silicon <a href="http://photonics.
This” target=”_blank” title=”photonics.
This”>photonics.
This talk will review the work that has been done by various researchers to develop BTO as a photonic platform, including various device demonstrations, the integration with silicon photonics, and its potential for applications in different fields. It will also discuss the commercial 200 mm BTO-silicon platform that Lumiphase has developed and the recent PIC <a href="http://demonstrations.
Speaker(s):” target=”_blank” title=”demonstrations.
Speaker(s):”>demonstrations.
Speaker(s): Felix Eltes
Agenda:
1:30 pm – 2:00 pm: Free networking (on-site only)
2:00 pm – 3:00 pm: Tech Talk (hybrid)
Room: MC603, Bldg: McConnell Engineering building, McGill University, 3480 rue University, Montreal, Quebec, Canada, H3A 0C3, Virtual: https://events.vtools.ieee.org/m/551060